SSC8030GQ4 - AFSEMI

SSC8030GQ4 N-Channel Enhancement Mode MOSFET

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Bottom View  Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/4 Analog Future SSC8030GQ4  Abso.

Features

 VDS 30V VGS ±20V RDSon TYP 8 mR@10V 10mR@4V5 ID 19A
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 General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications
 Load Switch
 PC/NB
 DCDC conversion Pin configuration Bottom View
 Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/4 Analog Future SSC8030GQ4
 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) .