SSC8033GS1 - AFSEMI

SSC8033GS1 P-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface.

Features

VDS -30V VGS ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID -5.4A
 Applications
 Load Switch
 DCDC conversion
 TFT panel power switch
 Pin configuration
 General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
 Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Uni.