Top View This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities. Package Information ⑥ ⑤④ ①② ③ Units:mm SOT23-6L SSC-1V0.
VDS
VGS
RDSon TYP 51mR@-10V
ID
Applications
Load Switch
Portable Devices
DCDC conversion
-30V ±12V
60mR@-4V5 98mR@-2V5
-4.2A
Pin configuration
General Description
Top View
This device is particularly suited for low voltage
application such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package Excellent thermal and
electrical capabilities.
Package Information
⑥ ⑤④
①②
③
Units:mm SOT23-6L
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8035GSB
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSC8035GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
2 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8030GQ4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
4 | SSC8030GS1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
5 | SSC8030GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
6 | SSC8030GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
7 | SSC8032GT4 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
8 | SSC8033GS1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
9 | SSC8033GS3 |
SPIRIT-SEMI |
P-Channel Enhancement Mode MOSFET | |
10 | SSC8033GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
11 | SSC8034GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
12 | SSC8034GT8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |