SSC8027GS6 - AFSEMI

SSC8027GS6 P-Channel Enhancement Mode MOSFET

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface .

Features

VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A
 Applications
 Load Switch
 Portable Devices
 DCDC conversion
 Pin Configuration
 General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
 Packa.