SSC8028GT8 - AFSEMI

SSC8028GT8 N-Channel Enhancement Mode MOSFET

Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Units:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Future SSC8028GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Paramete.

Features

VDS VGS RDSon TYP ID
 Applications
 Desktop Computer
 Notebook 20V ±16V 11mR@10V 16mR@4V5 12A
 Pin configuration
 General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
 Package Information Units:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Future SSC8028GT8
 Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Note 1) Co.