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SSC8015GS6 |
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| Part Number | SSC8015GS6 |
| Manufacturer | AFSEMI |
| Description | The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications. Appl... |
| Features |
VDS VGS -16V ±12V RDSon TYP 25mR@-4V5 33mR@-2V5 ID -4.5A General Description The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications. Applications Load Switch Portable Devices DCDC conversion Pin Configuration Top View Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8015GS6 Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Ratin... |
| Document |
 SSC8015GS6 Data Sheet
PDF 113.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8019GN2 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|