www.vishay.com Si5517DU Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PowerPAK® ChipFET® Dual D2 D2 6 D1 7 D1 8 5 1.9 mm 1 3.0 mm Top View Marking code: EA 1 4 G2 3 S2 2 G1 S1 Bottom View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 4.5 V RDS(on) () at VGS = ± 2.5 V RDS(on) () at VGS = ± 1.8 V Qg typ. (nC) ID .
• TrenchFET® power MOSFETs
• Thermally enhanced PowerPAK ChipFET
package - Small footprint area - Low on-resistance - Thin 0.8 mm profile
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
D1
S2
• Complementary MOSFET
for portable devices
G2
- Ideal for circuits
buck-boost G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK ChipFET Si5517DU-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL
P-CHANNEL
Drain-source volta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5511DC |
Vishay Siliconix |
MOSFET | |
2 | SI5513CDC |
Vishay Siliconix |
MOSFET | |
3 | SI5513DC |
Vishay Siliconix |
Complementary MOSFET | |
4 | SI5515CDC |
Vishay Siliconix |
MOSFET | |
5 | SI5515DC |
Vishay Siliconix |
Complementary MOSFET | |
6 | SI5519DU |
Vishay Siliconix |
MOSFET | |
7 | Si550 |
Silicon Laboratories |
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR | |
8 | Si550 |
Skyworks |
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR | |
9 | SI5504BDC |
Vishay Siliconix |
N-/P-Channel MOSFET | |
10 | SI5504DC |
Vishay Siliconix |
Complementary MOSFET | |
11 | SI5509DC |
Vishay Siliconix |
N-/P-Channel MOSFET | |
12 | Si552 |
Silicon Laboratories |
DUAL FREQUENCY VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR |