SI5515DC - Vishay Siliconix

SI5515DC Complementary MOSFET

Complementary 20 V (D-S) MOSFET Si5515DC Vishay Siliconix PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) 0.040 at VGS = 4.5 V 0.045 at VGS = 2.5 V 0.052 at VGS = 1.8 V 0.086 at VGS = - 4.5 V 0.121 at VGS = - 2.5 V 0.171 at VGS = - 1.8 V ID (A) 5.9 5.6 5.2 - 4.1 - 3.4 - 2.9 FEATURES • Halogen-free According to IEC 61249-2-21 Definiti.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Ultra Low RDS(on) and Excellent Power Handling In Compact Footprint
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switching for Portable Devices 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EC XXX Lot Traceability and Date Code Bottom View Part # Code Ordering Information: Si5515DC-T1-E3 (Lead (Pb)-free) Si5515DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel .