www.DataSheet.co.kr Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.036 at VGS = 4.5 V N-Channel 20 0.041 at VGS = 2.5 V 0.050 at VGS = 1.8 V 0.100 at VGS = - 4.5 V P-Channel - 20 0.120 at VGS = - 2.5 V 0.156 at VGS = - 1.8 V 1206-8 ChipFET® FEATURES ID (A)a Qg (Typ.) 4g 4g 4 g 6.5 nC • Halogen-free Ac.
ID (A)a Qg (Typ.) 4g 4g 4
g
6.5 nC
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
- 4g - 4g - 3.8 6.2 nC
APPLICATIONS
• Load Switch for Portable Devices
D1 1
S2
S1 D1 D1
3. 0 m m
Marking Code G1 S2 EH XXX G2 D2
1.8 mm
G2 Lot Traceability and Date Code G1
D2
Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET
Bottom View
Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free) Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Param.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5515DC |
Vishay Siliconix |
Complementary MOSFET | |
2 | SI5511DC |
Vishay Siliconix |
MOSFET | |
3 | SI5513CDC |
Vishay Siliconix |
MOSFET | |
4 | SI5513DC |
Vishay Siliconix |
Complementary MOSFET | |
5 | SI5517DU |
Vishay Siliconix |
N- and P-Channel MOSFET | |
6 | SI5519DU |
Vishay Siliconix |
MOSFET | |
7 | Si550 |
Silicon Laboratories |
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR | |
8 | Si550 |
Skyworks |
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR | |
9 | SI5504BDC |
Vishay Siliconix |
N-/P-Channel MOSFET | |
10 | SI5504DC |
Vishay Siliconix |
Complementary MOSFET | |
11 | SI5509DC |
Vishay Siliconix |
N-/P-Channel MOSFET | |
12 | Si552 |
Silicon Laboratories |
DUAL FREQUENCY VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR |