SI5509DC - Vishay Siliconix

SI5509DC N-/P-Channel MOSFET

Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.052 at VGS = 4.5 V 0.084 at VGS = 2.5 V 0.090 at VGS = - 4.5 V P-Channel - 20 0.160 at VGS = - 2.5 V ID (A)a 6.1a 4.8a - 4.8a - 3.6a Qg (Typ.) 3.9 nC 3.8 nC 1206-8 ChipFET® FEATURES • Halogen-free According to IEC 61249-2-21 Definition • .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Complementary MOSFET for Portable Devices - Ideal for Buck-Boost Circuits 1 S1 D1 D1 G1 S2 D2 G2 D2 D1 Marking Code ED XXX Lot Traceability G1 and Date Code Part # Code S2 G2 Bottom View Ordering Information: Si5509DC-T1-E3 (Lead (Pb)-free) Si5509DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain.