SI5513CDC - Vishay Siliconix

SI5513CDC MOSFET

www.DataSheet.co.kr Si5513CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.055 at VGS = 4.5 V 0.085 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.255 at VGS = - 2.5 V ID (A)a Qg (Typ.) 4g 4g - 3.7 - 2.9 2.6 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC P-Channel - 20 3.6 nC APPLICATIONS
• Load Switch for Portable Devices D1 S2 1206-8 ChipFET® 1 S1 D1 D1 D2 D2 G1 S2 G2 Marking Code EG XXX G1 Lot Traceability and Date Code S1 G2 Part # Code D2 P-Channel MOSFET Bottom View Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free) Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Vo.