www.DataSheet.co.kr Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel 20 −20 rDS(on) (W) 0.075 @ VGS = 4.5 V 0.134 @ VGS = 2.5 V 0.155 @ VGS = −4.5 V 0.260 @ VGS = −2.5 V ID (A) 4.2 3.1 −2.9 −2.2 Qg (Typ) 4 3 1206-8 ChipFETr 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 G2 G1 Marking Code EB .
−2.1 −10 −1.8 2.1 1.1 −2.1 −1.5 −0.9 1.1 0.6 W _C A Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 60 110 40 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5513CDC |
Vishay Siliconix |
MOSFET | |
2 | SI5511DC |
Vishay Siliconix |
MOSFET | |
3 | SI5515CDC |
Vishay Siliconix |
MOSFET | |
4 | SI5515DC |
Vishay Siliconix |
Complementary MOSFET | |
5 | SI5517DU |
Vishay Siliconix |
N- and P-Channel MOSFET | |
6 | SI5519DU |
Vishay Siliconix |
MOSFET | |
7 | Si550 |
Silicon Laboratories |
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR | |
8 | Si550 |
Skyworks |
VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR | |
9 | SI5504BDC |
Vishay Siliconix |
N-/P-Channel MOSFET | |
10 | SI5504DC |
Vishay Siliconix |
Complementary MOSFET | |
11 | SI5509DC |
Vishay Siliconix |
N-/P-Channel MOSFET | |
12 | Si552 |
Silicon Laboratories |
DUAL FREQUENCY VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR |