SI5511DC - Vishay Siliconix

SI5511DC MOSFET

www.DataSheet.co.kr Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (Ω) 0.055 at VGS = 4.5 V 0.090 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.256 at VGS = - 2.5 V ID (A) 4a,g 4a,g - 3.6 a FEATURES Qg (Typ) 4.2 nC • TrenchFET® Power MOSFETs APPLICATIONS • Buck-Boost - DSC - Portable Devices RoHS COM.

Features

Qg (Typ) 4.2 nC
• TrenchFET® Power MOSFETs APPLICATIONS
• Buck-Boost - DSC - Portable Devices RoHS COMPLIANT P-Channel - 30 - 2.7a 2.85 nC 1206-8 Chip-FET ® 1 S1 D1 D1 D2 D2 G1 S2 G2 D1 S2 Marking Code EE XXX G2 G1 Lot Traceability and Date Code Part # Code S1 Bottom View Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free) D2 P-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC .