SI5504DC - Vishay Siliconix

SI5504DC Complementary MOSFET

Complementary 30 V (D-S) MOSFET Si5504DC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 30 0.085 at VGS = 10 V 0.143 at VGS = 4.5 V P-Channel - 30 0.165 at VGS = - 10 V 0.290 at VGS = - 4.5 V ID (A) ± 3.9 ± 3.0 ± 2.8 ± 2.1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET® 1 S1 D1 G1 D1 S2 D2 G2 D2 Marking Code EA XX Lot Traceability and Date Code Part # Code Bottom View Ordering Information: Si5504DC-T1-E3 (Lead (Pb)-free) Si5504DC-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit Drain-Source Voltage Gate-Source Voltage V.