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RJK2006DPE |
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| Part Number | RJK2006DPE |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.1.00 Jan.14.2005 Features • Low on-resistance • Low leakage current • High speed switching ... |
| Features |
• Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current www.DataSheet4U.com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25... |
| Document |
 RJK2006DPE Data Sheet
PDF 98.40KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK2006DPE |
INCHANGE |
N-Channel MOSFET |
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| 2 | RJK2006DPF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | RJK2006DPJ |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | RJK2009DPM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | RJK2017DPP |
Renesas |
N-Channel Power MOSFET |
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