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High speed switching
Low drive current
Low on-resistance
RDS(on) = 8.2 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
4 G
Preliminary Datasheet
R07DS1056EJ0200 (Previous: REJ03G1884-0100)
Rev.2.00 Apr 11, 2013
5 D
SSS 123
1, 2, 3 Source 4 Gate 5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
ID ID(pulse).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK0851DPB |
Renesas Technology |
Silicon N Channel Power MOS FET | |
2 | RJK0852DPB |
Renesas Technology |
Silicon N Channel Power MOS FET | |
3 | RJK0853DPB |
Renesas Technology |
Silicon N Channel Power MOS FET | |
4 | RJK0854DPB |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK0856DPB |
Renesas Technology |
N-Channel Power MOSFET | |
6 | RJK0822SPN |
Renesas |
Silicon N Channel Power MOS FET | |
7 | RJK005N03 |
Rohm |
Drive Nch MOS FET | |
8 | RJK005N03FRA |
Rohm |
Nch 30V 500mA Small Signal MOSFET | |
9 | RJK0204DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | RJK0206DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
11 | RJK0208DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
12 | RJK0210DPA |
Renesas Technology |
N-Channel MOSFET |