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RJK0855DPB |
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| Part Number | RJK0855DPB |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th... |
| Features |
High speed switching Low drive current Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Halogen-free High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1056EJ0200 (Previous: REJ03G1884-0100) Rev.2.00 Apr 11, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)... |
| Document |
 RJK0855DPB Data Sheet
PDF 146.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK0851DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
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| 2 | RJK0852DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
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| 3 | RJK0853DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
|
| 4 | RJK0854DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
|
| 5 | RJK0856DPB |
Renesas Technology |
N-Channel Power MOSFET |
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