RJK0852DPB - Renesas Technology

RJK0852DPB Silicon N Channel Power MOS FET

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Features

 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Applications
 Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel tempera.