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RJK0854DPB - Renesas Technology

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RJK0854DPB Silicon N Channel Power MOS FET

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.

Features


 High speed switching
 Low drive current
 Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free
 High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1055EJ0200 (Previous: REJ03G1883-0100) Rev.2.00 Apr 11, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)N.

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