RJK0851DPB - Renesas Technology

RJK0851DPB Silicon N Channel Power MOS FET

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Features

+150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved. R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0851DPB Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitanc.