www.DataSheet4U.com RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 (3) zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 zApplications Switching zPackaging specifications and hFE Package Type RJK005N0.
1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 zApplications Switching zPackaging specifications and hFE Package Type RJK005N03 Code Basic ordering unit (pieces) Taping T146 3000 (1)Source (2)Gate (3)Drain Each lead has same dimensions Abbreviated symbol : KV zInner circuit (3) 0.3Min. (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK005N03FRA |
Rohm |
Nch 30V 500mA Small Signal MOSFET | |
2 | RJK0204DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
3 | RJK0206DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
4 | RJK0208DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
5 | RJK0210DPA |
Renesas Technology |
N-Channel MOSFET | |
6 | RJK0211DPA |
Renesas Technology |
N-Channel MOSFET | |
7 | RJK0212DPA |
Renesas Technology |
N-Channel MOSFET | |
8 | RJK0213DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
9 | RJK0214DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | RJK0215DPA |
Renesas Technology |
N-Channel MOSFET | |
11 | RJK0216DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
12 | RJK0222DNS |
Renesas Technology |
Silicon N Channel Power MOS FET |