of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel te.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK0206DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
2 | RJK0208DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
3 | RJK0210DPA |
Renesas Technology |
N-Channel MOSFET | |
4 | RJK0211DPA |
Renesas Technology |
N-Channel MOSFET | |
5 | RJK0212DPA |
Renesas Technology |
N-Channel MOSFET | |
6 | RJK0213DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
7 | RJK0214DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
8 | RJK0215DPA |
Renesas Technology |
N-Channel MOSFET | |
9 | RJK0216DPA |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | RJK0222DNS |
Renesas Technology |
Silicon N Channel Power MOS FET | |
11 | RJK0223DNS |
Renesas Technology |
Silicon N Channel Power MOS FET | |
12 | RJK0226DNS |
Renesas Technology |
Silicon N Channel Power MOS FET |