RJK0822SPN - Renesas

RJK0822SPN Silicon N Channel Power MOS FET

RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike) application in China .

Features

• Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V)
• High speed switching
• Low drive current
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike) application in China market. Rev.1.00, September.26.2007, page 1 of 7 RJK0822SPN Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel .