RJK0851DPB Renesas Technology Silicon N Channel Power MOS FET Datasheet, en stock, prix

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RJK0851DPB

Renesas Technology
RJK0851DPB
RJK0851DPB RJK0851DPB
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Part Number RJK0851DPB
Manufacturer Renesas (https://www.renesas.com/) Technology
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th...
Features +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved. R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Page 1 of 6 RJK0851DPB Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitanc...

Document Datasheet RJK0851DPB Data Sheet
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