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RJK0822SPN |
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| Part Number | RJK0822SPN |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | RJK0822SPN Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC... |
| Features |
• Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike) application in China market. Rev.1.00, September.26.2007, page 1 of 7 RJK0822SPN Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel ... |
| Document |
 RJK0822SPN Data Sheet
PDF 265.36KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK0851DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
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| 2 | RJK0852DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
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| 3 | RJK0853DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
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| 4 | RJK0854DPB |
Renesas Technology |
Silicon N Channel Power MOS FET |
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| 5 | RJK0855DPB |
Renesas Technology |
Silicon N-Channel Power MOSFET |
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