The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-.
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA127002EV Package H-36275-4
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
65
Output Power
55
65 55
45 45
35 35
25 1200 MHz 25
Efficiency
1300 MHz
15
1400 MHz
a127002ev_g1-1
15
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
Features
• Broadband input and output matching
• High gain and efficiency
• .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET | |
2 | PTVA120251EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTVA120252MT |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA120501EA |
MACOM |
50W High Power RF LDMOS FET | |
5 | PTVA120501EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTVA123501EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs | |
7 | PTVA123501FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs | |
8 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |