The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliabil.
include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTVA123501EC Package H-36248-2
PTVA123501FC Package H-37248-2
Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
POUT (dBm) Drain Efficiency (%)
60 80
55
Output Power
50
70 60
45 50
40
35
30 30
Efficiency
32 34 36
1200 MHz
40
1300 MHz
30
1400 MHz
38
40
a123501ec_g1-1
20
42
PIN (dBm)
Features
• Broadband internal inp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA123501FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs | |
2 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET | |
3 | PTVA120251EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA120252MT |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTVA120501EA |
MACOM |
50W High Power RF LDMOS FET | |
6 | PTVA120501EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA127002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |