PTVA120501EA - MACOM

PTVA120501EA 50W High Power RF LDMOS FET

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT .

Features

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle 60 55 50 45 40 35 30 18 70 Efficiency 60 50 Output Power 40 1200 MHz 30 1300 MHz 20 1400 MHz 10 a120501ea_g1-1 22 26 30 34 38 PIN (dBm) Features
• Broadband input matching
• High gain and efficiency
• Typical Pulsed CW p.