The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliabili.
include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Efficiency (%), Gain (dB) IMD Shoulder (dBc)
DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg
35 -23
30 -25
Efficiency
25 -27
20 Gain -29
15 -31
IMDASChPoRulder
10
ptva042502fc_g1
-33
450 500 550 600 650 700 750 800 850
Frequency (MHz)
PTVA042502EC Package H-36248-4
PTVA042502FC Package H-37248-4
Features
• Input .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA042502FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTVA047002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTVA082407NF |
MACOM |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTVA082407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA084007NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTVA092407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA093002TC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |