The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-3627.
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA035002EV Package H-36275-4
Gain (dB) Drain Efficiency (%)
Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle
22 85
20 Gain
18
75 65
16 55
14 Efficiency
12
45 35
10 48
a035002 gr 1
25
50 52 54 56 58 60
Output Power (dBm)
Features
• Unmatched input and output
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Cla.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTVA042502FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA047002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTVA082407NF |
MACOM |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTVA082407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA084007NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTVA092407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA093002TC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |