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PTVA127002EV |
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| Part Number | PTVA127002EV |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. ... |
| Features |
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA127002EV Package H-36275-4
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
65
Output Power
55
65 55
45 45
35 35
25 1200 MHz 25
Efficiency
1300 MHz
15
1400 MHz
a127002ev_g1-1
15
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
Features
• Broadband input and output matching • High gain and efficiency • ... |
| Document |
 PTVA127002EV Data Sheet
PDF 518.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |
|
| 2 | PTVA120251EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 3 | PTVA120252MT |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 4 | PTVA120501EA |
MACOM |
50W High Power RF LDMOS FET |
|
| 5 | PTVA120501EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|