PTVA101K02EV - Infineon

PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-362.

Features

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 26 128µs, 10% 22 128µs, 1% MODE-S 18 60 50 40 14 Gain 10 30 20 6 10 Efficiency 2 a101k02ev_1-1 0 30 35 40 45 50 55 60 65 Pout (dBm) Features
• Broadband input matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model .