The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2.
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA104501EH Package H-33288-2
POUT (dBm) Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C,
128 µs pulse width, 10% duty cycle
65
Output power Efficiency
55
65 55
45 45
35
960 MHz
35
1030 Mhz
25 1090 MHz 25
1150 MHz
1215 MHz
15
a104501eh_g1
15
28 30 32 34 36 38 40 42 44
PIN (dBm)
Features
• Broadband internal input and output matching
• High gain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA101K02EV |
Infineon |
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2 | PTVA120251EA |
MACOM |
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3 | PTVA120251EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA120252MT |
Wolfspeed |
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5 | PTVA120501EA |
MACOM |
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6 | PTVA120501EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA123501EC |
Infineon |
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8 | PTVA123501FC |
Infineon |
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9 | PTVA127002EV |
Infineon |
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10 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA035002EV |
Infineon |
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12 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |