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PTVA120501EA |
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| Part Number | PTVA120501EA |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. ... |
| Features |
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA120501EA Package H-36265-2
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
60 55 50 45 40 35 30
18
70
Efficiency
60
Output Power
50 40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22 26 30 34 38
PIN (dBm)
Features
• Broadband input matching • High gain and efficiency • Typical Pulsed ... |
| Document |
 PTVA120501EA Data Sheet
PDF 517.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PTVA120501EA |
MACOM |
50W High Power RF LDMOS FET |
|
| 2 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |
|
| 3 | PTVA120251EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 4 | PTVA120252MT |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 5 | PTVA123501EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FETs |
|