The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excell.
a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Package Types: PG-HBSOF-4-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 900 mA,
ƒ = 960 MHz, 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
60
20
Gain
40
16
20
Efficiency
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0 25
-60 ptva092407nf_g1 30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband i.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA093002TC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTVA042502FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTVA047002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA082407NF |
MACOM |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTVA082407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA084007NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |