The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal.
dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA093002TC Package H-49248H-4, formed leads
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier 3GPP WCDMA
VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.84 MHz bandwidth, 10 dB PAR
24
20 Gain
16
Efficiency
60 40 20
12 0
8 PAR @ 0.01% CCDF
4
-20 -40
0 25
a093002tc-gr1a
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Typical CW performance in a combined-lead.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA092407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTVA042502FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTVA047002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA082407NF |
MACOM |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTVA082407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA084007NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |