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PTVA042502EC |
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| Part Number | PTVA042502EC |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package wi... |
| Features |
include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
Efficiency (%), Gain (dB) IMD Shoulder (dBc)
DVB-T Performance Efficiancy, Gain and IMD3 Shoulder vs Frequency VDD = 50 V, IDQ = 800 mA, POUT = 55 W avg
35 -23
30 -25
Efficiency
25 -27
20 Gain -29
15 -31
IMDASChPoRulder
10
ptva042502fc_g1
-33
450 500 550 600 650 700 750 800 850
Frequency (MHz)
PTVA042502EC Package H-36248-4
PTVA042502FC Package H-37248-4
Features
• Input ... |
| Document |
 PTVA042502EC Data Sheet
PDF 357.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PTVA042502FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 2 | PTVA047002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 3 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 4 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 5 | PTVA082407NF |
MACOM |
Thermally-Enhanced High Power RF LDMOS FET |
|