The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%).
a single-ended design and input and output matching that allow for use from 755 MHz to 805 MHz.
Package Types: PG-HBSOF-4-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 800 mA, ƒ = 805 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
28
60
Gain
24
40
20
20
16
0
Efficiency
12
-20
8
4 25
-40
PAR @ 0.01% CCDF 30 35 40 45
ptva084007nf_g1
-60
50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Target CW performance, 805 MHz, 48 V, single side
- Output power at P3dB = 370 W - Efficienc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PTVA082407NF |
MACOM |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTVA082407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTVA030121EA |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTVA035002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTVA042502EC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTVA042502FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTVA047002EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTVA092407NF |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTVA093002TC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
10 | PTVA101K02EV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
11 | PTVA104501EH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
12 | PTVA120251EA |
MACOM |
25W High Power RF LDMOS FET |