Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptable power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 75 V s Pt.
s Logic level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptable power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 75 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 5.5 mΩ. 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline [1] Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d mb g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possibl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP152NQ03LT |
NXP Semiconductors |
TrenchMOS logic level FET | |
2 | PHP152NQ03LTA |
NXP |
N-channel TrenchMOS logic level FET | |
3 | PHP15N06E |
NXP |
PowerMOS transistor | |
4 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
6 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
7 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
8 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
9 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
10 | PHP10N10E |
NXP |
PowerMOS transistor | |
11 | PHP10N40 |
NXP |
PowerMOS transistor | |
12 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated |