N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP10N60E is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 case gate d.
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHP10N60E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 600 V
g
ID = 9.6 A RDS(ON) ≤ 0.75 Ω
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP10N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN 1 2 3 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP10N40 |
NXP |
PowerMOS transistor | |
2 | PHP10N10E |
NXP |
PowerMOS transistor | |
3 | PHP10N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
4 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
6 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
7 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
8 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
9 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
10 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
11 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |