N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP152NQ03LT in SOT78 (TO-220AB) PHB152NQ03LT in SOT404 (D2-PAK). 2. Features s Low gate charge s Low on-state resistance. 3. Applications s Optimized for DC to DC convertors. 4. Pinning information Table 1: 1 2 3 mb Pinning - SOT78,.
s Low gate charge s Low on-state resistance. 3. Applications s Optimized for DC to DC convertors. 4. Pinning information Table 1: 1 2 3 mb Pinning - SOT78, SOT404 simplified outline and symbol Simplified outline [1] mb mb Pin Description gate (g) drain (d) source (s) mounting base, connected to drain (d) Symbol d g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PHP/PHB152NQ03LT www.Da.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP152NQ03LTA |
NXP |
N-channel TrenchMOS logic level FET | |
2 | PHP153NQ08LT |
NXP |
N-channel TrenchMOS logic level FET | |
3 | PHP15N06E |
NXP |
PowerMOS transistor | |
4 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
6 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
7 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
8 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
9 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
10 | PHP10N10E |
NXP |
PowerMOS transistor | |
11 | PHP10N40 |
NXP |
PowerMOS transistor | |
12 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated |