N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Standard level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 40 V s Ptot .
s Standard level threshold s Very low on-state resistance. 1.3 Applications s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptible power supplies s General industrial applications. 1.4 Quick reference data s VDS ≤ 40 V s Ptot ≤ 157 W s ID ≤ 75 A s RDSon ≤ 8 mΩ. 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline [1] Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol mb d mb g mbb076 s 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
2 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
3 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
4 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
6 | PHP10N10E |
NXP |
PowerMOS transistor | |
7 | PHP10N40 |
NXP |
PowerMOS transistor | |
8 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
9 | PHP10N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
10 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
11 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |