P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 Top view 4 MAM398 PHP1025 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s s s g d d d d source source source ga.
• Very low RDSon at low threshold
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc. APPLICATIONS
• Power management
• DC-DC converters
• General purpose switch. DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
1 Top view 4
MAM398
PHP1025
PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s s s g d d d d source source source gate drain drain drain drain DES.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
2 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
3 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
4 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
6 | PHP10N10E |
NXP |
PowerMOS transistor | |
7 | PHP10N40 |
NXP |
PowerMOS transistor | |
8 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
9 | PHP10N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
10 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
11 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |