N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK). 2. Features s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC converters. 4. Pinning information Table 1: Pinning - S.
s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT533 simplified outline and symbol Simplified outline mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) g s MBB076 MBK106 1 Top view 2 3 MBK915 1 2 3 SOT78 (TO-220AB) SOT533 (I-PAK) Philips Semiconductors PHP/PHU101NQ03LT TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
2 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
3 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
4 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
6 | PHP10N10E |
NXP |
PowerMOS transistor | |
7 | PHP10N40 |
NXP |
PowerMOS transistor | |
8 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
9 | PHP10N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
10 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
11 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |