N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total po.
e Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 11 7.7 44 60 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W September 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP10N40 |
NXP |
PowerMOS transistor | |
2 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
3 | PHP10N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
4 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
6 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
7 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
8 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
9 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
10 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
11 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |