N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. QUICK .
ce voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; VGS = 10 V MIN. - 55 MAX. 10.7 6.7 43 147 1.176 ± 30 520 10 150 UNIT A A A W W/K V mJ A ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 0.85 UNIT K/W K/W March 1997 1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PHP10N40E |
NXP |
PowerMOS transistors Avalanche energy rated | |
2 | PHP10N10E |
NXP |
PowerMOS transistor | |
3 | PHP10N60E |
NXP |
PowerMOS transistors Avalanche energy rated | |
4 | PHP101NQ03LT |
NXP |
TrenchMOS logic level FET | |
5 | PHP101NQ04T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
6 | PHP1025 |
NXP |
P-channel enhancement mode MOS transistor | |
7 | PHP1035 |
NXP |
P-channel enhancement mode MOS transistor | |
8 | PHP108NQ03LT |
NXP |
TrenchMOS logic level FET | |
9 | PHP109 |
NXP |
P-channel enhancement mode MOS transistor | |
10 | PHP110NQ06LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
11 | PHP110NQ08LT |
NXP Semiconductors |
N-channel TrenchMOS logic level FET | |
12 | PHP110NQ08T |
NXP Semiconductors |
N-channel TrenchMOS standard level FET |