PDS4910 - Potens semiconductor

PDS4910 N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

 40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 Green Device Available Applications
 Notebook
 Load Switch
 LED applications
 Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TA=25℃) Drain Current
  – Continuous (TA=70℃) Drain Current
  – Pulsed1 Power Dissipation (TA=25℃) Pow.