PDS4200HQ Green 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5 Product Summary (@TA = +25°C) VRRM (V) 200 IO(MAX) (A) 4 VF(MAX) (V) 0.84 IR(MAX) (µA) 1 Features and Benefits Lower Forward Voltage Drop than Ultrafast Rectifiers Very Low Leakage Current Soft Recovery Characteristics: Softness Factor (tB/tA) ≥ 1 (See Figure 9) Highly Stable O.
Lower Forward Voltage Drop than Ultrafast Rectifiers
Very Low Leakage Current
Soft Recovery Characteristics: Softness Factor (tB/tA) ≥ 1 (See
Figure 9)
Highly Stable Oxide Passivated Junction
High Forward Surge Current Capability
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ PDS4200HQ is suitable for automotive
applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Applic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDS4200H |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
2 | PDS4229W-B |
Fujitsu |
Service Manual | |
3 | PDS4150 |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
4 | PDS4701 |
Potens semiconductor |
N+P Channel MOSFETs | |
5 | PDS4806 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
6 | PDS4810 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
7 | PDS4856 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDS4903 |
Potens semiconductor |
P-Channel MOSFETs | |
9 | PDS4904 |
Potens semiconductor |
N-Channel MOSFETs | |
10 | PDS4906 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDS4909 |
Potens semiconductor |
P-Channel MOSFETs | |
12 | PDS4910 |
Potens semiconductor |
N-Channel MOSFETs |