PDS4909 - Potens semiconductor

PDS4909 P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching.

Features

 -40V,-6.5A, RDS(ON) =45mΩ@VGS = -10V
 Improved dv/dt capability
 Fast switching
 Green Device Available Applications
 Motor Drive
 Power Tools
 LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (TC=25℃) Drain Current
  – Continuous (TC=100℃) Drain Current
  – Pulsed1 Single Pulse Avalanche Energy2 Single Puls.