and Applications This Schottky Barrier Rectifier has been designed to meet the stringent requirements of Automotive Applications. It is ideally suited to use as: • Polarity Protection Diode • Re-circulating Diode • Switching Diode POWERDI5 Mechanical Data • Case: POWERDI5 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classificat.
• Guard Ring Die Construction for Transient Protection
• Low Forward Voltage Drop
• Very Low Leakage Current
• High Maximum Junction Temperature Capability
• Highly Stable Oxide Passivated Junction
• High Forward Surge Current Capability
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Description and Applications
This Schottky Barrier Rectifier has been designed to meet the stringent requirements of Automotive Applications. It is ideally suited to use as:
• Pola.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | PDS4200H |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
2 | PDS4200HQ |
DIODES |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
3 | PDS4229W-B |
Fujitsu |
Service Manual | |
4 | PDS4701 |
Potens semiconductor |
N+P Channel MOSFETs | |
5 | PDS4806 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
6 | PDS4810 |
Potens semiconductor |
Dual N-Channel MOSFETs | |
7 | PDS4856 |
Potens semiconductor |
N-Channel MOSFETs | |
8 | PDS4903 |
Potens semiconductor |
P-Channel MOSFETs | |
9 | PDS4904 |
Potens semiconductor |
N-Channel MOSFETs | |
10 | PDS4906 |
Potens semiconductor |
N-Channel MOSFETs | |
11 | PDS4909 |
Potens semiconductor |
P-Channel MOSFETs | |
12 | PDS4910 |
Potens semiconductor |
N-Channel MOSFETs |